Methods for fabricating Ohmic contacts to nanowires and nanotubes
نویسندگان
چکیده
A comparison of methods to create Ohmic contacts to semiconductor nanowires NWs and carbon nanotubes CNTs is presented. A Ni/Au lift-off metallization was used to contact GaN and In2O3 NWs and CNTs using electron-beam e-beam or optical lithography. In order to render the metal-semiconductor contacts Ohmic, e-beam-processed devices are found to require a postfabrication, high-temperature anneal, whereas the use of an oxygen plasma prior to metallization is found to be crucial for devices defined by optical lithography. © 2006 American Vacuum Society. DOI: 10.1116/1.2162575
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